The MAT03 is a low noise, matched dual PNP transistor with features such as low offset voltage, low noise, high gain, and high gain bandwidth. It is suitable for demanding preamplifier applications.
The MAT03 dual monolithic PNP transistor offers excellent parametric matching, low offset voltage, and low noise performance, making it suitable for low‑noise amplifiers, microphone preamplifiers, current mirrors, and digitally programmable current pumps. Each transistor is individually tested and guaranteed at 25 °C and over extended temperature ranges.
The datasheet provides electrical characteristics, absolute maximum ratings, ordering information, noise measurement methods, and example application circuits. It also includes dimensions, package options (MAT03E and MAT03F in TO‑78), and ESD handling guidelines.
| Low Offset Voltage | 100 µV max |
|---|---|
| Low Noise Voltage Density | 1 nV/√Hz @ 1 kHz |
| Current Gain (hFE) Minimum | 100 |
| Gain Bandwidth | 190 MHz typ |
| Collector‑Base Voltage (BV CBO) | 36 V |
| Collector Current Rating | 20 mA |
The maximum offset voltage is 100 µV.
The noise voltage density is 1 nV/√Hz at 1 kHz.
The collector‑base voltage rating is 36 V.