BUL56A is a NPN silicon power transistor produced by SEME Semelab plc. It has the characteristics of high voltage, high speed and high energy, and is suitable for electronic ballast applications.
The document is a preliminary datasheet for the Semelab BUL56A, an advanced mechanical data distributed base design high-speed NPN silicon power transistor. It is specifically designed for use in electronic ballast applications and features multi-base construction for efficient energy distribution across the chip.
Key specifications include a collector-emitter sustaining voltage of 160V, a continuous collector current of 16A, and a total dissipation of 85W at Tcase = 25°C. The device operates within a temperature range of -55 to +150°C.
| Collector — Base Voltage (Vcbo) | 350V |
|---|---|
| Collector — Emitter Voltage (Vceo) | 160V |
| Emitter — Base Voltage (Vebo) | 10V |
| Continuous Collector Current | 16A |
| Peak Collector Current | 22A |
| Base Current | 5A |
| Total Dissipation at Tcase = 25°C | 85W |
| Operating and Storage Temperature Range | -55 to +150°C |
It is designed for use in electronic ballast applications.
Yes, it features triple guard rings for improved control of high voltages and has a collector-emitter sustaining voltage of 160V.