The UTC 2SA1020 is a PNP Silicon Transistor that is designed for power amplifier and power switching applications. It features low collector saturation voltage and high speed switching time. The product has Pb-free plating and is available in SOT-89 and TO-92NL packages.
The 2SA1020 is a PNP silicon epitaxial transistor intended for power‑amplifier and power‑switching applications. It offers a low collector saturation voltage and high‑speed switching, and is complementary to the UTC 2SC2655.
The document provides absolute maximum ratings, electrical characteristics, ordering information, and typical performance curves for the device in SOT‑89 and TO‑92NL packages.
| Collector‑Base Voltage (V CBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (V CEO) | -50 V |
| Emitter‑Base Voltage (V EBO) | -5 V |
| Collector Current (Ic) | -2 A |
| Junction Temperature (T J) | 150 °C |
| Turn‑on Time (t ON) | 0.1 µs |
| Storage Time (t STG) | 1.0 µs |
| Fall Time (t F) | 0.1 µs |
The maximum collector current is -2 A.
The absolute maximum collector‑emitter voltage is -50 V.