ST STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76 -4ATO-220/FP/DPAK/IPAK/D2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFEThandbook

STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 N-CHANNEL 600V-1.76 Ω-4A TO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET is a 600V low-resistance N-channel Power MOSFET produced by ST. It features a typical RDS(on) of 1.76 ohms, making it ideal for high-current, high-speed switching applications.


ST STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76 -4ATO-220/FP/DPAK/IPAK/D2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFEThandbook - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
747 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
8E6CD4C8EAD0BE5086C42BB818F2DE01

About this manual

The STP4NK60Z family is a Zener‑protected SuperMESH™ power MOSFET series offering 600 V rating, low on‑resistance and high dv/dt capability. It is optimized for high‑current, high‑speed switching applications such as offline power supplies, adapters, PFC circuits and lighting.

The datasheet provides absolute maximum ratings, thermal data, avalanche specifications, gate‑source Zener protection details, and extensive electrical parameters for each device variant (STP4NK60Z, STP4NK60ZFP, STB4NK60Z, STB4NK60Z‑1, STD4NK60Z, STD4NK60Z‑1). Package options include TO‑220, DPAK, IPAK and D2PAK.

What's inside

  • Description
  • Applications
  • Ordering Information
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Gate‑Source Zener Diode
  • Electrical Characteristics
  • Switching Characteristics
  • Mechanical Data

Specifications

Drain‑source voltage (VDS)600 V

Frequently asked questions

What is the maximum drain‑source voltage rating?

The MOSFETs are rated for a maximum drain‑source voltage of 600 V.

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