This is a PNP switching transistor designed for high-speed saturated switching applications with currents up to 100mA.
The ST5771-1 is a PNP switching transistor designed for high‑speed saturated switching up to 100 mA. The datasheet provides absolute maximum ratings, thermal characteristics and detailed electrical parameters.
Key sections include absolute maximum ratings, thermal characteristics, electrical characteristics, off‑state and on‑state specifications, small‑signal parameters and switching performance data.
| Collector‑Emitter Voltage (Vceo) | 15 V |
|---|---|
| Collector‑Base Voltage (Vcbo) | 15 V |
| Emitter‑Base Voltage (Vebo) | 45 V |
| Continuous Collector Current (Ic) | 200 mA |
| Total Device Dissipation (Po) | 350 mW |
| Derating above 25 °C | 28 mW/°C |
| Thermal Resistance, Junction‑to‑Case | 125 °C·W |
| Thermal Resistance, Junction‑to‑Ambient | 357 °C·W |
The continuous collector current rating is 200 mA.
The device can dissipate up to 350 mW.
The operating and storage junction temperature range is –55 °C to +150 °C.
Vceo is 15 V, Vcbo is 15 V, and Vebo is 45 V.