The TLP224G series consists of a gallium arsenide infrared emitting diode optically coupled to a photo‑MOS FET in a 4‑pin DIP package. It is intended for high‑tech communications equipment such as modems and complies with FCC part 68 rules with a current‑limiting function.
The document lists detailed electrical characteristics, maximum ratings, recommended operating conditions, and restrictions on product use, helping designers select appropriate operating parameters and ensure safe, reliable designs.
| Peak Off‑State Voltage | 350 V |
|---|---|
| Forward Current (Ip) | 50 mA |
| Reverse Voltage (VR) | 6 V |
| Isolation Voltage | 2500 Vrms (AC, 1 min) |
| Supply Voltage (VDD) | 280 V |
| Storage Temperature Range | -65 °C to 125 °C |
The maximum off‑state voltage is 350 V.
The forward current (Ip) rating is 50 mA.
It provides an isolation voltage of 2500 Vrms (AC, 1 min, RH = 60%).