MSB710-RT1 is a PNP general purpose amplifier produced by Semiconductor Components Industries, LLC. The maximum collector-emitter breakdown voltage is -50V, the maximum collector-base breakdown voltage is -60V, the maximum emitter-base breakdown voltage is -7.0V, the maximum collector current is -500mA, and the maximum peak collector current is -1.0A.
The MSB710‑RT1 is a PNP general‑purpose amplifier transistor offered in a surface‑mount SC‑59 package. It is intended for applications requiring moderate voltage and current handling with a compact footprint.
The document lists maximum ratings, thermal characteristics, electrical parameters, marking details, and ordering information, as well as package dimensions and soldering footprint for design and production use.
| Collector‑Base Voltage (V(CBO)) | -60 V |
|---|---|
| Collector‑Emitter Voltage (V(CEO)) | -50 V |
| Emitter‑Base Voltage (V(EBO)) | -7.0 V |
| Continuous Collector Current (I_C) | 500 mA |
| Peak Collector Current (I_C peak) | 1.0 A |
| Power Dissipation (P_D) | 200 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (T_s) | -55 to +150 °C |
The device can handle a continuous collector current of 500 mA.
It is supplied in an SC‑59 surface‑mount package, available on tape & reel.
Ordering information lists the part numbers MSB710‑RT1 and MSB710‑RT1G with SC‑59 packaging and tape & reel shipment.