TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability.
The TSML1000 series are high‑efficiency infrared emitting diodes built with GaAlAs/GaAs technology in a clear SMD package. They deliver high radiant power, low forward voltage, and are suitable for remote‑control, photointerrupter, punched‑tape reader, and encoder applications.
The document lists absolute maximum ratings, typical electrical characteristics, package and reel dimensions, handling precautions, and environmental compliance information such as RoHS and ozone‑depleting substance policies.
| Peak wavelength | 950 nm |
|---|---|
| Forward current | 100 mA |
| Power dissipation | 190 mW |
| Junction temperature | 100 °C |
| Radiant intensity (IF=20 mA, tp=20 ms) | 37.5 mW/sr |
| Angle of half intensity | ±12° |
| Storage temperature range | -40 to +100 °C |
| Soldering temperature limit | <260 °C |
The peak wavelength is 950 nm.
Store the devices between –40 °C and +100 °C.
Apply series resistors for protection; otherwise a slight voltage shift can cause large current changes and burn‑out.