GFB75N03 N-Channel Enhancement-Mode MOSFET is a low voltage DC/DC converter produced by STMicroelectronics. It features advanced trench process technology, high density cell design for ultra low on-resistance, specially designed for low voltage DC/DC converters, fast switching for high efficiency and high temperature soldering in accordance with CECC802/Reflow guaranteed.
The GFB75N03 MOSFET from General Semiconductor is a N‑Channel enhancement‑mode device designed for low‑voltage DC‑DC converters and fast‑switching applications. It features an advanced trench process, high‑density cell design, and a JEDEC TO‑263AB molded plastic package.
Key specifications include a 30 V drain‑source rating, 75 A continuous drain current, 6.5 mΩ typical on‑resistance, and a junction‑to‑case thermal resistance of 2.0 °C·W. The device also offers a gate‑source voltage rating of +20 V and a pulsed drain current capability of 240 A.
| Drain‑Source Voltage (Vds) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Id) | 75 A |
| Pulsed Drain Current (Idm) | 240 A |
| On‑Resistance (Rds(on), typical) | 6.5 mΩ |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.0 °C·W |
The device is rated for a maximum drain‑source voltage of 30 V.
It can handle a continuous drain current of 75 A.
The typical on‑resistance is 6.5 mΩ.