This document provides the absolute maximum ratings and electrical characteristics of the KSB907 PNP Silicon Darlington Transistor. The transistor features high DC current gain, low collector-emitter saturation voltage, and a built-in damper diode. It is suitable for power amplifier applications.
This datasheet describes the Fairchild KSB907 PNP silicon Darlington transistor, highlighting its high DC current gain, low collector‑emitter saturation voltage, and built‑in damper diode. It lists the absolute maximum ratings, electrical characteristics, and typical performance curves.
Package information for the I‑PAK form factor is given, along with trademark, disclaimer, and life‑support policy statements. The document also defines product status terms used throughout Fairchild’s datasheets.
| Collector‑Base Voltage (Vcbo) | 60 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 40 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | 3 A |
| Base Current (Ib) | 0.3 A |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Ts) | -55 ~ 150 °C |
The maximum collector current is 3 A.
Collector‑Base voltage is 60 V, collector‑emitter voltage is 40 V, and emitter‑base voltage is –5 V.
The device is supplied in an I‑PAK package.
No, Fairchild does not authorize its use in life‑support devices without written approval.