This document provides information about the absolute maximum ratings and electrical characteristics of the FJNS4204R PNP epitaxial silicon transistor. The transistor is designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor with R1=47KΩ and R2=47KΩ.
The FJNS4204R is a PNP epitaxial silicon transistor with a built‑in bias resistor (Ry = 47 kΩ). It is intended for switching applications such as bias‑resistor‑built‑in circuits, inverters, interface circuits, and driver circuits. The device includes a complementary part, the FJINS3204R.
Key specifications include a collector‑base breakdown voltage of –50 V, collector‑emitter breakdown voltage of –50 V, maximum collector current of –100 mA, and a power dissipation rating of 300 mW. The transistor is supplied in a TO‑92S package with defined mechanical dimensions, and it is not approved for use in life‑support equipment without explicit permission from Fairchild Semiconductor.
| Collector‑Base Voltage (V_CBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -50 V |
| Maximum Collector Current (I_C) | -100 mA |
| Power Dissipation (P_D) | 300 mW |
| Junction Temperature (T_J) | 150 °C |
| Built‑in Bias Resistor (R_y) | 47 kΩ |
The maximum collector‑emitter voltage is –50 V.
The built‑in bias resistor is 47 kΩ.
It is supplied in a TO‑92S package.
No, Fairchild does not authorize its use in life‑support devices without written approval.