FQPF33N10 100V N-Channel MOSFET is a high performance power field effect transistor produced by Fairchild. It features 18A, 100V, RDS(on) = 0.052Ω @VGS = 10 V, low gate charge, low Crss, fast switching and more.
The FQPF33N10 is a 100 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters and motor control.
Key specifications include an 18 A continuous drain current, 0.052 Ω on‑resistance at Vgs = 10 V, typical gate charge of 38 nC, and a maximum junction temperature of 175 °C. The datasheet provides detailed electrical characteristics, thermal data, typical performance curves, and test circuit diagrams.
| Drain-Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 18 A |
| Typical Gate Charge (Qg) | 38 nC |
| Power Dissipation (Pd) at 25 °C | 41 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.70 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Maximum Junction Temperature | 175 °C |
The device can handle a continuous drain current of 18 A at a case temperature of 25 °C.
The FQPF33N10 is rated for a drain‑source voltage of 100 V.
The typical gate charge is 38 nC.