BDX54/A/B/C is a PNP silicon transistor produced by Fairchild Semiconductor International. Its maximum collector-emitter reverse voltage (VCEO) and maximum collector-emitter voltage (VCE) are respectively -100V and -80V, maximum collector-base reverse voltage (VCBO) is -100V, and maximum emitter-base voltage (VEBO) is -5V. The maximum DC collector current (IC) of the transistor is -8A, the maximum pulse collector current (ICP) is -12A, the maximum base current (IB) is -0.2A, the maximum collector power dissipation (PC) is 60W, and the junction temperature is 150 °C. The storage temperature is -65 to 150 °C.
The Fairchild BDX54/A/B/C datasheet provides the absolute maximum ratings, electrical characteristics and typical performance curves for the PNP epitaxial silicon Darlington transistors. It lists voltage limits, current capabilities, power dissipation and temperature ranges for each variant (BDX54, BDX54A, BDX54B, BDX54C).
Package information specifies a TO‑220 case with detailed mechanical dimensions. The document also includes trademark notices, product status definitions and legal disclaimer statements from Fairchild Semiconductor.
| Emitter‑Base Voltage (max) | -5 V |
|---|---|
| Base Current | 0.2 A |
| Package Type | TO‑220 |
It is supplied in a TO‑220 package.