FJV3107R is a NPN type transistor produced by Fairchild Semiconductor Corporation. Its typical characteristics are shown in Figure 1. The working temperature of the transistor is -55 ~ 150 °C, the maximum collector voltage is 50V, the collector-emitter reverse breakdown voltage is 50V, the collector-emitter saturation voltage is 0.3V, the output capacitance is 3.7pF, and the frequency gain bandwidth product is 250MHz.
The FJV3107R is an NPN epitaxial silicon transistor offered in a SOT‑23 package. It includes a built‑in bias resistor and is intended for switching, inverter, interface and driver circuits.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical dimensions, along with trademark, disclaimer and product status information.
| Collector‑Base Voltage (Vcbo) | 50 V |
|---|---|
| Collector‑Emitter Voltage (Vcce) | 50 V |
| Emitter‑Base Voltage (Vebo) | 10 V |
| Collector Current (Ic) | 100 mA |
| Power Dissipation (Pc) | 200 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to 150 °C |
| DC Current Gain (hFE) | 68 (typ) |
| Collector‑Emitter Saturation Voltage (Vcesat) | 0.3 V (typ) |
| Output Capacitance (Cob) | 3.7 pF (typ) |
| Current Gain Bandwidth Product (fT) | 250 MHz (typ) |
| Input Off Voltage (Voff) | 0.4 V (typ) |
| Input On Voltage (Von) | 2.5 V (typ) |
| Input Resistor (Ry) | 22 kΩ (typ) |
| Resistor Ratio (Ry/Re) | 0.47 (typ) |
The maximum collector current is 100 mA.
The collector‑emitter breakdown voltage is rated at 50 V.
The typical DC current gain is 68.