This file is the OPE5585 product manual, which introduces the features and characteristics of the product.
The OPE5585 infrared emitter is a GaAlAs diode designed for high power, low forward voltage and very fast 25 ns rise time. It features a narrow‑beam lensed T1‑3/4 plastic package and is intended for data‑transmission applications such as IrDA, IRLAN and wireless digital links.
Key specifications include a maximum power dissipation of 150 mW, continuous forward current of 100 mA (1 A pulse), reverse voltage of 4 V, operating temperature range –25 °C to +85 °C, and a peak emission wavelength of 850 nm with a 45 nm spectral bandwidth. The device also offers a radiant intensity up to 100 mW/sr and a half‑angle of about +10°.
| Forward Current (continuous) | 100 mA |
|---|---|
| Pulse Forward Current | 1.0 A |
| Reverse Voltage | 4.0 V |
| Operating Temperature | -25 °C to +85 °C |
| Soldering Temperature | 260 °C |
| Reverse Current (typical) | 10 µA |
| Capacitance | 20 pF |
| Peak Emission Wavelength | 850 nm |
| Spectral Bandwidth | 45 nm |
| Half Angle | +10° |
| Optical Rise Time | 25 ns |
| Cut‑off Frequency | 14 MHz |
The device has a 25 ns optical rise time (10 %–90 %).
The peak emission wavelength is 850 nm.
Continuous forward current is 100 mA, and pulse forward current can reach 1.0 A with a 1 % duty ratio.