Intel's 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases memory flexibility, while contributing to time and cost savings. The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel's 28F020 is offered in 32-
The Intel 28F020 flash memory provides 2048‑kilobit nonvolatile storage with fast 90 ns access time and low power consumption (10 mA typical active current, 100 µA standby). It supports up to 100,000 erase and program cycles and includes latch‑up protection up to 100 mA.
The device is available in 32‑pin PDIP, 32‑lead PLCC, and 32‑lead TSOP packages and operates over commercial and extended temperature ranges. A 12.0 V Vpp supply is required for erase and program operations, and the part conforms to JEDEC‑standard pinouts.
| Memory density | 2048 kilobit (256 K × 8) |
|---|---|
| Maximum access time | 90 ns |
| Typical active current | 10 mA |
| Maximum standby current | 100 µA |
| Programming voltage (Vpp) | 12.0 V |
| Erase/program cycles | 100,000 cycles |
| Latch‑up immunity | up to 100 mA |
| Package options | 32‑pin PDIP, 32‑lead PLCC, 32‑lead TSOP |
| Operating temperature | Commercial and Extended |
The maximum access time is 90 ns.
It can perform up to 100,000 erase and program cycles.
A 12.0 V Vpp supply is used for erase and program operations.
The device is offered in 32‑pin PDIP, 32‑lead PLCC, and 32‑lead TSOP packages.