This document describes the features and characteristics of STMicroelectronics' STS6NF20V N-CHANNEL 20V - 0.030 Ω - 6A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET.
The STS6NF20V is a 20 V, 6 A N‑channel power MOSFET in an SO‑8 package, featuring ultra‑low gate drive voltage (2.7 V) and a compact strip‑based process for high packing density and low on‑resistance. It offers rugged avalanche capability and easy automated surface‑mount assembly.
Typical applications include DC motor drives, DC‑DC converters, battery management for portable equipment, and power management in desktop PCs. The datasheet lists absolute maximum ratings, detailed electrical characteristics, thermal data, switching performance, and mechanical dimensions.
| Drain‑source Voltage (Vds) | 20 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 6 A |
| Continuous Drain Current (Id) at 100 °C | 3.8 A |
| Pulsed Drain Current | 24 A |
| Total Power Dissipation (Pd) | 2.5 W |
| Typical On‑Resistance (Rds(on)) at Vgs=4.5 V | 0.030 Ω |
| Gate Threshold Voltage (Vgs(th)) typical | 0.6 V |
| Thermal Resistance Junction‑ambient (RθJA) | 50 °C/W |
| Operating Junction Temperature Range | -55 °C to 150 °C |
| Package | SO‑8 |
The device can handle a continuous drain current of 6 A at 25 °C.
The typical gate threshold voltage is 0.6 V.
The typical on‑resistance is 0.030 Ω at Vgs = 4.5 V.
The junction‑to‑ambient thermal resistance is 50 °C/W.