The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has multiple sectors, each of which can be erased individually. The device also has multiple words, each of which can be programmed individually. The device has read, program, and erase pins that are used to control the device's various operation modes.
This handbook describes the AT49BV160D/T 16‑megabit flash memory, its voltage range, access time, power consumption, and packaging. It explains the device’s organization into 39 sectors, the common flash interface, and the flexible sector protection mechanisms.
The document provides detailed pin configurations, command sequences for read, program, erase, and suspend/resume operations, as well as status register definitions. It also covers soft‑lock and hard‑lock protection modes, VPP write‑protect behavior, and revision history of the part.
| Operating Voltage (Read/Write) | 2.65 V to 3.6 V |
|---|---|
| Access Time | 70 ns |
| Fast Sector Erase Time | 100 ms |
| Active Power Consumption | 10 mA |
| Minimum Erase Cycles | 100,000 |
| Package | 48‑lead TSOP |
| Memory Size | 16 Mbit (1M × 16) |
It operates from 2.65 V up to 3.6 V for both read and write.
The device guarantees a minimum of 100,000 erase cycles.
Yes, the Program Suspend command pauses programming for up to 10 µs, allowing reads from other words.