This document describes the features and characteristics of the AT49BV640D(T) product. The product is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. It features single voltage operation, fast word program time, and low-power operation.
The AT49BV640D(T) is a 32‑megabit (4,194,304 × 16‑bit) flash memory device offered in 56‑lead TSOP and 48‑ball CBGA packages. It supports single‑voltage operation (2.65 V – 3.6 V) and is designed for in‑system programming with flexible sector protection, erase‑suspend, and program‑suspend features.
The datasheet describes pin configurations, command sequences, sector organization (135 sectors), timing parameters, protection modes (Softlock/Hardlock), and power‑down behavior, providing all information needed for hardware designers and firmware developers.
| Operating Voltage | 2.65 V – 3.6 V |
|---|---|
| Access Time | 70 ns |
| Fast Word Program Time | 10 ps |
| Typical Sector Erase Time (32 K‑word) | 700 ms |
| Low‑Power Active Current | 10 mA |
| Minimum Erase Cycles | 100 000 |
| Memory Size | 32 Mbit (4,194,304 × 16‑bit words) |
| Package Types | 56‑lead TSOP, 48‑ball CBGA |
It operates from 2.65 V to 3.6 V.
The device guarantees a minimum of 100 000 erase cycles.
The access time is 70 ns.
Yes, the device supports an erase‑suspend feature that allows other reads or programming while erase is paused.