BYT51 is a silicon mesa rectifier produced by Vishay Telefunken. It features glass passivated junction, hermetically sealed package and low reverse current.
This datasheet covers the BYT51 series of Silicon Mesa Rectifiers from Vishay. It lists features such as glass‑passivated junctions, hermetically sealed packages, and low reverse current, and notes that the devices are intended for rectifier applications.
Key electrical parameters are presented, including reverse voltage ratings for each variant, forward surge current, thermal resistance, and typical forward voltage. The document also includes mechanical dimensions, diode capacitance data, and an environmental policy confirming the products contain no ozone‑depleting substances.
| Reverse voltage (BYT51A) | 50 V |
|---|---|
| Reverse voltage (BYT51B) | 100 V |
| Peak forward surge current | 50 A (10 ms half‑sine) |
| Repetitive peak forward current | 9 A |
| Average forward current on PCB (10 mm lead) | 1 A |
| Junction temperature range | -65 °C to +175 °C |
| Thermal resistance (10 mm lead, 25 mm spacing) | 45 K/W |
| Forward voltage (1 A, typical) | 0.95 V |
| Reverse current | 1 µA |
| Reverse recovery time | 4 µs |
| Diode capacitance | 57 pF (typical) |
The BYT51 series offers reverse voltage ratings from 50 V (BYT51A) up to 800 V (BYT51K) depending on the variant.
The devices can handle a peak forward surge current of 50 A for a 10 ms half‑sine waveform.
The datasheet specifies a thermal resistance of 45 K/W for a 10 mm lead with 25 mm board spacing.
No, Vishay states that its semiconductors are not manufactured with ozone‑depleting substances.