The TC58FVM6(T/B)2A(FT/XB)65 is a 3.0-V read-only electrically erasable and programmable flash memory with an 8M × 8 bits/4M × 16 bits organization.
The TC58FVM6(T/B)2A(FT/XB)65 is a 64‑Mbit (8M × 8 bits or 4M × 16 bits) CMOS flash memory with a supply voltage of 2.38 V to 3.6 V and an operating temperature range of –40 °C to 85 °C. It supports read, program, and erase operations based on JEDEC standard commands, and offers simultaneous read/write capability across four banks.
Key features include auto‑program, auto‑page program, block and chip erase, program/erase suspend‑resume, data polling, and various power‑saving modes such as auto‑sleep. The device is offered in two package types: TSOP148‑P‑1220‑0.50 and P‑TFBGA56‑0710‑0.80AZ.
| Capacity | 64 Mbit (8M × 8 bits / 4M × 16 bits) |
|---|---|
| Supply Voltage (VDD) | 2.38 V ~ 3.6 V |
| Operating Temperature | -40 °C ~ 85 °C |
| Standby Current | 10 µA |
| Package (TSOP) | TSOP148‑P‑1220‑0.50 (0.51 g) |
| Access Time (Random/Page) | 65 ns / 30 ns (typ.) |
The device operates from 2.38 V to 3.6 V.
Yes, the device can read data from one bank while writing or erasing another bank.