This document introduces the features and characteristics of the Surface Mount RF Schottky Barrier Diodes HSMS-282x series, including low turn-on voltage, low FIT rate, multiple versions and package configurations, matched diodes, better thermal conductivity, etc. These diodes are specifically designed for both analog and digital applications, and are widely used in mixing, detecting, switching, sampling, clamping, etc.
The HSMS-282x series offers low turn‑on voltage, low FIT rate, and a variety of SOT‑23, SOT‑143, SOT‑323 and SOT‑363 packages. Features include grounded‑center leads for higher isolation, matched diodes for consistent performance, and lead‑free options.
The handbook provides electrical specifications, SPICE parameters, typical performance curves, application guidance for detectors, mixers and voltage doublers, as well as mechanical drawing dimensions and ordering information.
| Forward Current (Ip) | 1 A (1 µs pulse) |
|---|---|
| Peak Inverse Voltage (PIV) | 15 V |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -65 °C to 150 °C |
| Thermal Resistance (RθJC) | 500 °C/W (SOT‑23) / 150 °C/W (SOT‑363) |
The diodes are rated for a 1 µs pulse forward current of 1 A.
Dice for pairs and quads are taken from adjacent sites on the wafer to achieve the highest degree of match.
The peak inverse voltage is rated at 15 V.