TSMF1000 Vishay Telefunken is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package. These emitters achieve about 100 % radiant power improvement at a similar wavelength.
The TSMF1000 infrared emitting diode uses GaAlAs on GaAs technology to deliver extra‑high radiant power and low forward voltage, making it suitable for high‑pulse‑current operation, IrDA, free‑air transmission, and photointerrupter applications. Its half‑intensity angle is 17°, and it offers good spectral matching to silicon photodetectors.
Key electrical and optical characteristics include a reverse voltage rating of 5 V, a continuous forward current of 100 mA (with 1 A possible for 100 µs pulses), a peak wavelength of 870 nm, and a radiant power of up to 35 mW. The device operates from –40 °C to 85 °C (ambient) and is supplied in a clear SMD package with defined dimensions.
| Reverse Voltage (VR) | 5 V |
|---|---|
| Forward Current (IF) Continuous | 100 mA |
| Angle of Half Intensity | +17° |
| Junction Temperature (Tj) | 100 °C |
| Operating Temperature Range | –40 °C to 85 °C |
The diode can handle a continuous forward current of 100 mA, with a surge rating of 1 A for 100 µs pulses.
The device is rated for a reverse voltage of 5 V.
The half‑intensity angle is specified as +17°.