The DS28E04-100 is a 4096-bit, 1-Wire® EEPROM chip with seven address inputs. The address inputs are directly mapped into the 1-Wire 64-bit Device ID Number to easily enable the host system to identify the physical location or functional association of the DS28E04-100 in a multidevice 1-Wire network environment. The 4096-bit EEPROM array is configured as 16 pages of 32 bytes with a 32 byte scratchpad to perform write operations. EEPROM memory pages can be individually write protected or put in EPROM- emulation mode, where bits can only be changed from a 1 to a 0 state. In addition to the memory, the DS28E04-100 has two general-purpose I/O ports that can be used for input or to generate level and/or pulse outputs. Activity registers also capture port activity for state change monitoring. The DS28E04- 100 communicates over the single-contact 1-Wire bus. The communication follows the standard Maxim 1-Wire protocol.
The DS28E04-100 is a 4096‑bit 1‑Wire® EEPROM chip that provides seven address inputs for unique device identification and two general‑purpose I/O (PIO) pins for input or pulse‑output functions. It communicates over a single‑contact 1‑Wire bus and supports both parasitic power and optional VCC supply.
The device includes a 32‑byte scratchpad, 16 pages of 32‑byte EEPROM memory, and a set of control registers for page protection, EPROM mode, and PIO activity monitoring. Detailed electrical characteristics, absolute maximum ratings, and pin descriptions are provided for system designers.
| Memory capacity | 4096 bits (512 bytes) |
|---|---|
| Number of pages | 16 pages |
| Page size | 32 bytes per page |
| Address inputs | 7 (A0‑A6) |
| General‑purpose I/O pins | 2 (PIO) |
| Supply voltage range | 2.8 V to 5.25 V |
| Operating temperature range | -40 °C to +85 °C |
It provides 4096 bits (512 bytes) of EEPROM organized as 16 pages of 32 bytes each.
The device has seven address inputs, labeled A0 through A6.
It operates from 2.8 V up to 5.25 V, with optional parasitic power mode.
The device is rated for -40 °C to +85 °C.