The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. This diode is also available in the Mini-MELF case with the type designations LL103A to LL103C, DO35 case with the type designations SD103A to SD103C and SOD123 case with type designations SD103AW-V to SD103CW-V. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. It is suitable for general purpose applications. Lead (Pb)-free component, compliant with RoHS 2002/95/EC and WEEE 2002/96/EC.
The SD103 series are metal‑on‑silicon Schottky barrier diodes offered in SOD323, Mini‑MELF, DO35 and SOD123 packages. They feature low forward voltage drop, fast switching, and are RoHS‑compliant lead‑free components suitable for MOS device protection, steering, biasing and coupling applications.
The document provides mechanical data, absolute maximum ratings, electrical characteristics, package dimensions and ordering information, along with Vishay’s environmental policy and legal disclaimer. This manual is written in Chinese.
| Peak reverse voltage (VRRM) SD103AWS‑V | 40 V |
|---|---|
| Peak reverse voltage (VRRM) SD103BWS‑V | 30 V |
| Peak reverse voltage (VRRM) SD103CWS‑V | 20 V |
| Power dissipation (Ptot) | 200 mW |
| Thermal resistance (RthJA) | 500 K/W |
| Junction temperature (Tj) | 125 °C |
| Storage temperature range (Tstg) | -55 to +150 °C |
| Forward voltage drop at IF=20 mA (VF) | 370 mV |
| Forward voltage drop at IF=200 mA (VF) | 600 mV |
| Diode capacitance (CD) at 1 MHz | 50 pF |
| Reverse recovery time (trr) | 10 ns |
The SD103AWS‑V diode has a peak reverse voltage of 40 V.
At a forward current of 20 mA, the SD103AWS‑V diode drops about 370 mV.
Yes, the diodes are lead‑free and comply with RoHS 2002/95/EC and WEEE 2002/96/EC.