V20120S, VF20120S, VB20120S & VI20120S are Vishay General Semiconductor's high-voltage trench MOS barrier Schottky rectifiers with ultra low VF = 0.50 V, suitable for high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diodes, DC to DC converters and reverse battery protection.
The V20120S family are high‑voltage trench MOS barrier Schottky rectifiers designed for high‑frequency inverters, switching power supplies, free‑wheeling and OR‑ing diode applications. They feature low forward voltage drop, low power loss and meet RoHS and WEEE directives.
Key specifications include a maximum reverse voltage of 120 V, forward current rating up to 20 A, forward voltage drop as low as 0.50 V at 5 A, and a junction temperature rating of 150 °C. The devices are offered in TO‑220AB, ITO‑220AB, TO‑263AB and TO‑262AA packages with detailed mechanical dimensions and thermal resistance data.
| Maximum repetitive peak reverse voltage (VRRM) | 120 V |
|---|---|
| Maximum average forward rectified current (IF(AV)) | 20 A |
| Maximum junction temperature (TJ max) | 150 °C |
| Typical thermal resistance (RθJC) | 24‑22 °C/W |
The maximum repetitive peak reverse voltage is 120 V.
They are offered in TO‑220AB, ITO‑220AB, TO‑263AB and TO‑262AA packages.
A solder dip of 260 °C for 40 seconds is recommended for TO‑220AB, ITO‑220AB and TO‑262AA packages.