The SRM20116LFT85/10 is a 65,536‑word x 16‑bit asynchronous static RAM implemented on a monolithic CMOS chip. It features low standby power, TTL‑compatible I/O, 3‑state outputs with wired‑OR capability, and non‑volatile storage with backup batteries.
The document lists absolute maximum ratings, recommended operating conditions, detailed DC and AC electrical characteristics, package dimensions (plastic QFP5‑80 pin), and data‑retention behavior at low supply voltages. It also includes functional timing diagrams and truth tables for read/write operations.
| Memory Capacity | 65,536 words x 16‑bit |
|---|---|
| Access Time | 85 ns (typ) / 100 ns (max) |
| Supply Voltage | ‑0.5 V to 7.0 V |
| Standby Supply Current | 2 µA (typ) |
| Operating Temperature Range | ‑40 °C to +85 °C |
| Data Retention Supply Voltage | 2.0 V to 5.5 V |
Typical standby supply current is 2 µA.
The device operates from –40 °C to +85 °C.
The typical access time is 85 ns, with a maximum of 100 ns.