The MT6LO4AE is a silicon NPN epitaxial planar transistor designed for VHF‑UHF band low‑noise amplifier applications. It is offered in a super‑thin 6‑pin ES6 package and is suitable for general electronics such as computers, office equipment, measuring devices, industrial robotics, and domestic appliances.
The document lists the device's maximum voltage and current ratings, detailed electrical parameters, handling guidelines to prevent electrostatic damage, and restrictions on use in safety‑critical or high‑reliability systems.
| Collector‑Base Voltage (VcBO) | 10 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 5 V |
| Emitter‑Base Voltage (VEB0) | 2 V |
| Collector Current (Ic) | 40 mA |
| Base Current (Ip) | 10 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Noise Figure (NF) at 1 GHz | 1.2 dB |
The device can withstand up to 10 V collector‑base, 5 V collector‑emitter, and 2 V emitter‑base voltages.
The junction temperature limit is 125 °C, and the storage temperature range is –55 °C to 125 °C.
It is intended for general electronics such as computers, personal and office equipment, measuring equipment, industrial robotics, and domestic appliances.