The document describes the features and characteristics of the HCTS32MS radiation hardened quad 2-input OR gate produced by Intersil. The product utilizes advanced CMOS/SOS technology and has radiation hardened properties, making it suitable for military applications. The gate circuit features low power consumption, high speed response, and high immunity to interference.
The HCTS32MS is a radiation‑hardened quad 2‑input OR gate built with advanced CMOS/SOS technology for high‑speed operation. It is offered in a 14‑lead ceramic flat‑pack (FLATPACK) or a metal‑seal SBDIP package.
The datasheet provides absolute maximum ratings, operating conditions, DC and AC electrical performance, post‑radiation characteristics, and extensive burn‑in and irradiation test procedures. Key specifications include a 4.5 V‑5.5 V supply range, -55 °C to +125 °C operating temperature, and a total dose tolerance of 200 kRad (Si).
| Package | 14‑lead ceramic dual‑in‑line metal‑seal (SBDIP) |
|---|---|
| Operating Temperature Range | -55 °C to +125 °C |
| Total Radiation Dose Tolerance | 200 kRad (Si) |
It is rated for -55 °C to +125 °C operating temperature.
The part is qualified for up to 200 kRad (Si) total dose.
It is offered in a 14‑lead ceramic flat‑pack (FLATPACK) and a 14‑lead metal‑seal SBDIP package.