This document presents preliminary data of semiconductor products SFH 3500/FA and SFH 3505/FA, released on November 12, 1998. These products are NPN silicon phototransistors with dimensions of 3.9mm x 7.1mm x 13.1mm, suitable for various applications. Detailed package and electrical parameters are also provided in the document.
The SFH 3500/FA and SFH 3505/FA are NPN silicon phototransistors offered by Siemens. They are suitable for applications from 450 nm to 1060 nm (or 880 nm for the FA versions) and can be mounted on PCB either surface‑mounted (SFH 3500/FA) or inserted (SFH 3505/FA). The devices are supplied on tape and reel.
Key electrical parameters include a collector‑emitter voltage of 35 V, a maximum collector current of 50 mA, and a power dissipation of 150 mW. Their spectral peak is at 830 nm (SFH 3500/FA) or 860 nm (SFH 3505/FA) with a sensitivity range of 450 nm–1060 nm. The package is a 5 mm LED style with 2.54 mm lead spacing. This manual is written in German.
| Operating temperature range | -40 °C to +85 °C |
|---|---|
| Collector‑emitter voltage (VCE) | 35 V |
| Collector current (IC) | 50 mA |
| Total power dissipation | 150 mW |
| Chip dimensions | 1.00 mm × 1.00 mm |
| Half‑angle | 13° |
| Dark current (at 5 V) | 3 nA (typ.) |
The devices operate from –40 °C up to +85 °C.
The maximum collector‑emitter voltage is 35 V.