This document describes the features and characteristics of the BUZ 91 semiconductor power transistor. It is an N-channel enhancement mode power transistor with a breakdown voltage of 600V, a continuous drain current of 8.5A, and a drain-source resistance of 0.8Ω. The transistor also features avalanche rating and low on-resistance. It is suitable for various power applications.
The BUZ 91 is a 600 V, 8.5 A N‑channel enhancement‑mode SIPMOS power transistor offered in a TO‑220 AB package. It is intended for high‑voltage switching applications and is marked "Not for new design".
The datasheet lists key specifications such as continuous and pulsed drain currents, breakdown voltage, avalanche energy, thermal resistance, and capacitances, as well as the safe operating area and package outline dimensions.
| Drain‑source breakdown voltage | 600 V |
|---|---|
| Gate‑source voltage | +20 V |
| Operating temperature range | -55 °C to +150 °C |
| Avalanche energy (periodic) | 13 mJ |
The transistor’s breakdown voltage is rated at 600 V.
The periodic avalanche energy is limited to 13 mJ, with a single‑pulse limit of 16.3 mJ.