This document is about the technical parameters of 2N3418, 2N3419, 2N3420, 2N3421, 2N3418S, 2N3419S, 2N3420S, 2N3421S, including maximum ratings, working temperature range, package type, etc.
The Microsemi 2N3418/2N3419/2N3420/2N3421 series are NPN medium‑power silicon transistors qualified per MIL‑PRF‑19500/393. They are offered in TO‑39 (TO205‑AD) packages and are intended for applications requiring moderate voltage and current handling.
Key electrical ratings include collector‑emitter voltages up to 60 V (2N3418/2N3419) or 80 V (2N3420/2N3421), collector currents up to 3 A or 5 A, total power dissipation of 1 W at 25 °C, and an operating temperature range from –65 °C to +200 °C. Detailed on‑ and off‑characteristics, dynamic and switching parameters are provided for design reference.
| Collector‑Emitter Voltage (VCEO) | 60 V (2N3418/2N3419), 80 V (2N3420/2N3421) |
|---|---|
| Collector Current (IC) | 3.0 A (2N3418/2N3419), 5.0 A (2N3420/2N3421) |
| Total Power Dissipation @ Ta = +25 °C | 1.0 W |
| Operating & Storage Temperature Range | -65 °C to +200 °C |
The 2N3420 transistor is rated for a maximum collector‑emitter voltage of 80 V.
The device can dissipate up to 1.0 W when the ambient temperature is 25 °C.