Hitachi HZM-N Series Zener Diode Datasheet

The HZM-N series is a silicon epitaxial planar zener diode for stabilizer. It features a wide spectrum of zener voltage from 1.9V through 38V for flexible applications. The MPAK package is suitable for high density surface mounting and high speed assembly.


Hitachi HZM-N Series Zener Diode Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
38 KB
Published
04 May, 2012
Updated
30 September, 2023
MD5 checksum
C4F7F900DBD3F368DF2911CF44CF126A

About this manual

The HZM-N series offers a wide spectrum of zener voltages from 1.9 V through 38 V, making them suitable for flexible stabilizer applications. The devices are supplied in an MPAK package that supports high‑density surface mounting and fast assembly.

Key specifications include a maximum power dissipation of 200 mW, a junction temperature rating of 150 °C, and a storage temperature range of –55 °C to +150 °C. Detailed electrical characteristics for each voltage grade are listed, along with marking codes and package dimensions.

What's inside

  • Features
  • Ordering Information
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Mark Code
  • Example of Marking
  • Package Dimensions
  • Temperature Coefficient
  • Power Dissipation

Specifications

Power dissipation200 mW
Junction temperature (Tj)150 °C
Storage temperature (Tstg)-55 °C to +150 °C
Package typeMPAK surface‑mount
Zener voltage range1.9 V to 38 V
Package dimensions25 mm × 62 mm × 7.6 mm
Weight0.011 g

Frequently asked questions

What is the maximum power dissipation of the HZM-N diodes?

The maximum power dissipation is 200 mW.

Which package is used for the HZM-N series?

They are supplied in an MPAK surface‑mount package.

What is the storage temperature range?

The diodes can be stored from –55 °C up to +150 °C.

What zener voltage options are available?

The series covers zener voltages from 1.9 V to 38 V.

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