Si1022R is a Vishay Siliconix new product, a N-channel 60-V (D-S) MOSFET. It features low on-resistance (1.25 Ω), low threshold (2.5 V), low input capacitance (30 pF), fast switching speed (25 ns), low input and output leakage, miniature package, low offset voltage, low-voltage operation, high-speed circuits, low error voltage, and small board area. It is suitable for driving relays, solenoids, lamps, hammers, displays, memories, transistors, etc., and battery operated systems and solid-state relays.
The Si1022R is a 1N‑Channel MOSFET rated for 60 V drain‑source voltage. It features a low threshold voltage of about 2.5 V, low on‑resistance of 1.25 Ω, and a small input capacitance of 30 pF, making it suitable for high‑speed circuits and compact board layouts.
Key electrical parameters include a continuous drain current of 330 mA, a power dissipation of 130 mW, and a thermal resistance (junction‑to‑ambient) of 500 °C/W. The device is specified for operation from –55 °C to 150 °C and offers fast switching times around 25 ns.
| Gate-Threshold Voltage (VGS(th)) | 2.5 V |
|---|---|
| On-Resistance (rDS(on)) | 1.25 Ω |
| Input Capacitance (Ciss) | 30 pF |
| Switching Speed | 25 ns |
| Operating Temperature Range | -55 to 150 °C |
| Power Dissipation | 130 mW |
| Thermal Resistance, Junction‑to‑Ambient (RthJA) | 500 °C/W |
Typical VGS(th) is 2.5 V.
rDS(on) is 1.25 Ω at VGS = 10 V.
The input capacitance (Ciss) is 30 pF.