This document describes the features and characteristics of the 2SK2054 N-CHANNEL MOS FET. The product is a N-channel MOS FET for high-speed switching, which can be directly driven by the output of a 5V IC. It has low ON resistance and excellent switching characteristics, making it ideal for driving actuators and DC/DC converters.
The NEC 2SK2054 is a vertical N‑channel MOSFET designed for high‑speed switching. It can be driven directly from a 5 V logic output and offers low on‑resistance for efficient power conversion.
The document provides absolute maximum ratings, typical electrical parameters, switching characteristics, and package dimensions, along with reference documents and legal notices.
| Drain‑to‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | 20 V |
| Continuous Drain Current (ID) | 3.0 A |
| On‑State Resistance (RDS(on)) at VGS=4 V, ID=1.5 A | 0.18 Ω (typical) |
| Input Capacitance (Ciss) | 530 pF |
The maximum drain‑to‑source voltage is 60 V.
Yes, it can be directly driven by the output of a 5‑V IC.
Typical RDS(on) is 0.18 Ω under those conditions.
The device is rated for a continuous drain current of 3.0 A.