PD55008L-E is a N-Channel enhancement-mode lateral MOSFETs product from ST. This product has excellent thermal stability, high gain and wide bandwidth, and is suitable for car mobile radio applications.
The PD55008L‑E is an N‑channel enhancement‑mode lateral MOSFET designed for high‑gain, broadband RF power applications such as commercial and industrial transmitters. It features a leadless plastic PowerFLAT™ package and integrated ESD protection.
Key specifications include a 40 V drain‑source rating, 5 A drain current, 19.5 W power dissipation at 70 °C, 4.41 °C/W junction‑to‑case thermal resistance, 53 pF input capacitance, and a typical gain of 17 dB with 8 W output power at 500 MHz.
| Drain‑source voltage (VDS) | 40 V |
|---|---|
| Gate‑source voltage (VGS) | -0.5 to +15 V |
| Drain current (ID) | 5 A |
| Power dissipation (PD) | 19.5 W @ 70 °C |
| Junction‑to‑case thermal resistance (RθJC) | 4.41 °C/W |
| Typical gain at 500 MHz | 17 dB |
| Output power at 500 MHz | 8 W |
The device can withstand up to 40 V drain‑source voltage.
It provides a typical gain of 17 dB at 500 MHz.
The transistor can dissipate up to 19.5 W when the case temperature is 70 °C.