STMICROELECTRONICS STD2NC45-1 STQ1NC45 handbook

This document describes an N-channel MOSFET released on June 1, 2003, with the model numbers STD2NC45-1 and STQ1NC45. The device features a drain-source voltage of 450V, an on-resistance of 4.1Ω, and a drain current of 1.5A. It has extremely high dv/dt capability, is 100% avalanche tested, and has minimized gate charge. The device is suitable for applications such as switch mode low power supplies, low power and low-cost compact fluorescent lamps, and low power battery chargers.

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Brand

STMicroelectronics

File format

PDF

Published

10 April, 2012

Updated

29 September, 2023

MD5 checksum

82D4B8A342C533982B65665A64F89F98

PDF

STMICROELECTRONICS STD2NC45-1 STQ1NC45 handbook PDF