This document describes an N-channel MOSFET released on June 1, 2003, with the model numbers STD2NC45-1 and STQ1NC45. The device features a drain-source voltage of 450V, an on-resistance of 4.1Ω, and a drain current of 1.5A. It has extremely high dv/dt capability, is 100% avalanche tested, and has minimized gate charge. The device is suitable for applications such as switch mode low power supplies, low power and low-cost compact fluorescent lamps, and low power battery chargers.
The STD2NC45-1 and STQ1NC45 are N‑channel PowerMOSFETs from STMicroelectronics featuring a 450 V drain‑source rating, typical on‑resistance of 4.1 Ω, and a continuous drain current of 1.5 A at 25 °C. The device uses the SuperMESH™ layout to achieve low RDS(on) and high dv/dt capability, making it suitable for demanding high‑voltage applications.
Typical applications include switch‑mode power supplies, low‑power compact fluorescent lamps, and low‑power battery chargers. Ordering information, package types (IPAK, TO‑92, Ammopack), and detailed mechanical dimensions are provided for proper selection and integration.
| Drain‑source voltage (VDS) | 450 V |
|---|---|
| Typical on‑resistance (RDS(on)) | 4.1 Ω |
| Continuous drain current (ID) at 25 °C | 1.5 A |
| Junction‑case thermal resistance (Rthj‑case) | 4.1 °C/W |
The device is rated for a maximum drain‑source voltage of 450 V.
The typical on‑resistance is 4.1 Ω.
It can carry up to 1.5 A continuously at 25 °C.