Zetex ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET is a new generation trench MOSFET with a unique structure that combines the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
The ZXMN6A25G is a 60 V, N‑channel enhancement mode MOSFET offered in a SOT‑223 package. It combines low on‑resistance with fast switching, making it suitable for high‑efficiency power‑management applications such as DC‑DC converters, disconnect switches, and motor control.
Key specifications include a maximum drain‑source voltage of 60 V, a typical on‑resistance of 0.050 Ω at Vgs = 10 V, and a continuous drain current of 6.7 A at 25 °C. The device features low gate drive requirements and includes detailed thermal and electrical parameters for design engineers.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| On‑resistance (RDS(on)) typical | 0.050 Ω (VGS=10 V, ID=3.6 A) |
| Gate charge (Qg) | 11.0 nC |
| Package | SOT‑223 |
| Junction‑to‑ambient thermal resistance | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 60 V.
It is supplied in a SOT‑223 surface‑mount package.
Typical on‑resistance is 0.050 Ω at VGS = 10 V and ID = 3.6 A.