ON Semiconductor BUB323Z NPN Power Darlington Datasheet

The BUB323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.


ON Semiconductor BUB323Z NPN Power Darlington Datasheet - cover page
Brand
ON Semiconductor
Category
Power Amplifier
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
90 KB
Published
07 April, 2012
Updated
30 September, 2023
MD5 checksum
91BC4B5F367DC7012F0C5679274DCC59

About this manual

The BUB323Z is a monolithic, high‑voltage power Darlington transistor designed for unclamped inductive applications such as electronic ignition, switching regulators and motor control. It features an integrated active‑clamp circuit and a tight clamping voltage window of 350 V to 450 V.

The device is supplied in a D2PAK (418B) package, supports up to 10 A continuous collector current, 150 W power dissipation, and operates from –40 °C to +125 °C. Thermal resistance is 1.0 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient). Pb‑free versions are available.

What's inside

  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Dynamic Characteristics
  • Switching Characteristics
  • Ordering Information
  • Package Dimensions
  • Legal Disclaimer

Specifications

Collector‑Emitter Sustaining Voltage (VCEO)350 V
Collector‑Emitter Voltage (VEBO)6.0 V
Clamping Voltage Window350 V to 450 V
Package TypeD2PAK (418B)
Pb‑Free Package AvailabilityYes

Frequently asked questions

What clamping voltage range does the BUB323Z provide?

It provides a clamping voltage window from 350 V to 450 V.

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