The NTGS4111P is a power MOSFET produced by Semiconductor Components Industries, LLC. Its features include the use of a leading -30 V trench process with low RDS(on), a low profile package suitable for portable applications, a surface mount TSOP-6 package that saves board space, improved efficiency for battery applications, and a lead-free package that is available.
The NTGS4111P is a single P‑channel power MOSFET rated for -30 V and -4.7 A, offered in a low‑profile TSOP‑6 surface‑mount package. It is intended for battery management, load switching, and battery protection applications, with a Pb‑free package option.
The document lists maximum ratings, electrical characteristics, switching performance, and package dimensions. It also includes ordering information, typical performance curves, and notes on soldering and mounting. Contact details for technical support and literature ordering are provided at the end.
| Drain-to-Source Voltage (VDS) | -30 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | -3.7 A |
| Power Dissipation (PD) | 1.25 W |
| Input Capacitance (Ciss) | 750 pF |
| On‑Resistance (RDS(on)) | 38 mΩ (typical at VGS = -10 V, ID = -3.7 A) |
The maximum drain-to-source voltage is -30 V.
The typical continuous drain current is -3.7 A at 25 °C.
It is supplied in a TSOP‑6 surface‑mount package.
The input capacitance (Ciss) is 750 pF.