This document contains the specifications of SANYO Semiconductor Co.,Ltd. products
This datasheet describes the SPA13003 NPN triple‑diffused planar silicon transistor, part of the 13003 series, intended for switching regulator applications. It lists key features such as high breakdown voltage and high‑speed switching, and provides detailed electrical characteristics and absolute maximum ratings.
The document also includes safety and usage notes, storage temperature limits, and package dimensions, helping designers integrate the device into standard electronic equipment while observing recommended operating conditions.
| Collector‑to‑Base Voltage (V_CBO) | 700 V |
|---|---|
| Collector‑to‑Emitter Voltage (V_CEO) | 400 V |
| Base Current (I_B) | 0.5 A |
| Collector Current (continuous) (I_C) | 1 A |
| Collector Current (pulse) (I_C) | 2 A |
| Storage Temperature Range | -55 °C to +150 °C |
The continuous collector current rating is 1 A, and the device can handle a pulse current of up to 2 A for short durations.
The SPA13003 is intended for switching regulator applications, offering high breakdown voltage and high‑speed switching.
The device may be stored from –55 °C up to +150 °C.