This document describes the TIP120, TIP121, TIP122 (NPN) and TIP125, TIP126, TIP127 (PNP) models of medium-power complementary silicon transistors. These transistors are designed for general-purpose amplifier and low-speed switching applications, and feature high DC current gain, low collector-emitter saturation voltage, and built-in base-emitter shunt resistors.
This datasheet provides the electrical, thermal, and mechanical specifications for the ON Semiconductor TIP120 series NPN and TIP125 series PNP power transistors. It includes maximum ratings, characteristic curves, and ordering information for the various device variants.
Key data include collector‑emitter voltage limits, continuous collector current, power dissipation, thermal resistance, and DC current gain. Package dimensions for the TO‑220 case and recommended ordering codes are also listed.
| Collector‑Emitter Voltage (Vceo) | 60 V (TIP120/TIP125), 80 V (TIP121/TIP126), 100 V (TIP122/TIP127) |
|---|---|
| Continuous Collector Current (Ic) | 5 A |
| Total Power Dissipation (Pd) @ 25 °C | 65 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.92 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Base‑Emitter Saturation Voltage (Vbe(sat)) | ≈ 2.0 V @ Ic=3 A |
All listed devices have a continuous collector current rating of 5 A.
The datasheet specifies a total power dissipation of 65 W at 25 °C.
The junction‑to‑case thermal resistance is 1.92 °C/W.