BTA12-600BW3G and BTA12-800BW3G are triacs designed for high performance full-wave AC control applications. They feature high noise immunity and high commutating di/dt.
The document provides detailed specifications for the BTA12‑600BW3G and BTA12‑800BW3G silicon bidirectional thyristors (triacs). It lists maximum ratings, thermal and electrical characteristics, dynamic behavior, and package dimensions for the TO‑220AB style devices.
Key sections cover features, maximum voltage and current ratings, thermal resistance values, gate trigger requirements, and mechanical drawing of the TO‑220AB case. Ordering information and contact details for ON Semiconductor technical support are also included.
| Blocking Voltage | 600 V (BTA12‑600BW3G) / 800 V (BTA12‑800BW3G) |
|---|---|
| On‑State RMS Current Rating | 12 A RMS at 25 °C |
| Uniform Gate Trigger Current | 600 V‑800 V range |
| dV/dt Immunity | ≥ 2000 V/µs at 125 °C |
| dI/dt Commutating | ≥ 2.5 A/ms at 125 °C |
| RMS Isolation Voltage | 2500 V |
| Junction‑to‑Case Thermal Resistance (Rjc) | 2.5 °C·W⁻¹ |
| Junction‑to‑Ambient Thermal Resistance (Rja) | 60 °C·W⁻¹ |
| Package | TO‑220AB (Case 221A) |
| Maximum Junction Temperature | -40 °C to +125 °C |
The BTA12‑600BW3G is rated for 600 V blocking voltage, while the BTA12‑800BW3G is rated for 800 V.
Both devices can conduct 12 A RMS at 25 °C.
They are supplied in an industry‑standard TO‑220AB package (Case 221A).
Junction‑to‑Case thermal resistance is 2.5 °C·W⁻¹ and junction‑to‑ambient is 60 °C·W⁻¹.