ISL6208 is a high-frequency, dual MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that require high efficiency and excellent thermal performance. This driver, combined with an Intersil multiphase Buck PWM controller, forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors. The ISL6208 features 4A typical sinking current for the lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the Phase node. This prevents shoot-through power loss caused by the high dv/dt of phase voltages. The operating voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies. The ISL6208 also features a three-state PWM input that, working together with Intersil’s multiphase PWM controllers, will prevent negative voltage output during CPU shutdown. This feature eliminates a protective Schottky diode usually seen in a microprocessor power systems. MOSFET gates can be efficiently switched up to 2MHz using the ISL6208. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns. Bootstrapping is implemented with an internal Schottky diode. This reduces system cost and complexity, while allowing the use of higher performance MOSFETs.
The ISL6208 is a high‑frequency, dual MOSFET driver optimized for synchronous‑rectified buck converter topologies. It delivers 4 A typical sink current and includes features such as adaptive shoot‑through protection, three‑state PWM input, and an internal bootstrap diode.
The document details electrical specifications, thermal information, package options (SOIC‑8 and 3 × 3 mm QFN), layout recommendations, and typical performance waveforms, helping designers integrate the driver into mobile computing power supplies and other high‑frequency DC‑DC converters.
| Typical sinking current | 4 A |
|---|---|
| Maximum junction temperature (plastic package) | +150 °C |
| Propagation delay (UGATE rise) | 8 ns |
The driver provides a typical sinking current of 4 A.
It adds a shutdown window to the PWM input that disables the output drivers when the PWM signal stays within the window for a set hold‑off time.
The recommended ambient temperature range is –10 °C to +100 °C.
The device is offered in an 8‑lead SOIC package and a 3 × 3 mm QFN package.