The SPP30N03 is an N‑channel power MOSFET designed for high‑current applications. It features a low on‑state resistance, high avalanche energy capability, and a wide operating temperature range.
The datasheet provides detailed electrical characteristics such as drain current, gate threshold voltage, and capacitances, as well as thermal parameters, maximum ratings, and package dimensions for both tube and surface‑mount versions.
| Drain‑source on‑state resistance (typical) | 0.023 Ω |
|---|---|
| Avalanche energy, single pulse | 146 mJ |
| Gate threshold voltage (typical) | 2.4 V |
| Maximum operating temperature | +175 °C |
The typical drain‑source on‑state resistance is about 0.023 Ω.