MT3S03AU is a low-voltage, low phase noise NPN transistor from Toshiba. Its features are excellent noise characteristics, fT is 3-5 GHz, and noise index is 1.4-2.2 dB, suitable for VHF~UHF band use.
The MT3S03AU is a silicon NPN epitaxial planar transistor designed for VHF/UHF low‑voltage operation with low phase noise. The document lists its absolute maximum ratings, electrical parameters, and microwave performance.
Key specifications include a collector current of 40 mA, transition frequency fT of 3–5 GHz (at VcE=1 V, Ic=5 mA), and a Cbe capacitance of about 1 pF. The transistor is rated for operation from –55 °C to 125 °C, and static‑discharge protection is required during handling. This manual is written in Japanese.
| Collector‑Base voltage (VcBo) | 10 V |
|---|---|
| Maximum collector current (Ic) | 40 mA |
| Transition frequency fT (VcE=1 V, Ic=5 mA) | 3–5 GHz |
| Operating temperature range (Ta) | -55 °C to 125 °C |
| Maximum junction temperature | 125 °C |
The maximum collector current is 40 mA.
It is rated for operation from –55 °C up to 125 °C.
The transition frequency fT is between 3 GHz and 5 GHz under those conditions.