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This document describes the features and characteristics of the 2SD2670 transistor, which is primarily used as a low frequency amplifier driver. It has a large collector current and a low saturation voltage. The document also provides information on the external dimensions and absolute maximum ratings of the transistor.
2SD2672 is a low frequency power transistor produced by Mitsubishi Electric. Its characteristics are large collector current (4A) and low collector-emitter saturation voltage (250mV), which are suitable for low frequency amplifiers and driver circuits.
2SD2673 Transistors is a low frequency power amplifier produced by Toshiba. Its feature is that it can withstand a collector current of 3A and a collector-emitter saturation voltage of 250mV.
This document describes the features and characteristics of the 2SD2674 transistor, including its application, dimensions, absolute maximum ratings, and electrical characteristics.
2SD2675 is a general purpose amplifier suitable for low frequency amplifier application. It features a large collector current and a low collector saturation voltage (VCE(sat): max. 350 mV).
2SD2696 is a NPN silicon transistor produced by ROHM. It has the characteristic of low saturation voltage and can be widely used in switching circuits.
2SD2700 is a low frequency amplifier driver with large collector current and low saturation voltage. It is suitable for low frequency amplifier driving.
2SD2702 is a bipolar transistor produced by ROHM. It is suitable for low frequency amplifier circuits. Its features are large collector current and low collector saturation voltage (200mV@IC=500mA/IB=25mA).
2SD2703 is a general purpose amplification transistor launched by ROHM, its features are large current amplification factor and low saturation voltage.
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S are general purpose transistors produced by ROHM. They have high DC current gain, high emitter-base voltage and low saturation voltage.
This document describes the features and characteristics of the BC858BW / BC858B PNP general purpose transistors, including BVCEO < -30V (IC=-1mA) and complementary features with BC848B / BC848BW.
