This document describes the features and characteristics of the 2SD2670 transistor, which is primarily used as a low frequency amplifier driver. It has a large collector current and a low saturation voltage. The document also provides information on the external dimensions and absolute maximum ratings of the transistor.
The ROHM 2SD2670 is a low‑frequency amplifier transistor with a large collector current capability. This datasheet provides absolute maximum ratings, electrical characteristics, and packaging details for designers.
Key sections include features, maximum ratings, electrical parameters, packaging specifications, characteristic curves, and legal notices. The document is intended for reference use in a variety of electronic equipment.
| Collector‑base voltage (Vcbo) | 15 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 12 V |
| Emitter‑base voltage (Vebo) | 6 V |
| Power dissipation (Pd) | 12 W |
| Junction temperature (Tj) | 150 °C |
| DC current gain (hFE) | 270 – 680 |
| Transition frequency (fT) | 360 MHz |
| Collector output capacitance (Cob) | 30 pF |
The maximum collector‑base voltage is 15 V.
The transistor can dissipate up to 12 W.
The DC current gain (hFE) ranges from 270 to 680.