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2SB1698 is a low frequency amplifier driver from Rohm Semiconductor. It features a large collector current and a low collector-emitter saturation voltage.
2SB1697 is a low frequency amplifier with a low VCE(sat) of ≤-180mV (IC/IB=-1A/-50mA). The rated working voltage is -12V and the rated working current is -2A.
2SB1695K is a low frequency amplifier driver with large collector current and low saturation voltage. It has an ROHM SMT3 package, EIAJ SC-59 package, and JEDEC SOT-346 package.
2SB1694 is a NPN transistor from ROHM. It features a large collector current and a low saturation voltage. 2SB1694 has a maximum collector-emitter voltage of -30V and a maximum collector current of -1A. 2SB1694 is suitable for low-frequency amplifiers and drivers.
2SB1690K is a general purpose amplifier for low frequency amplification and driving. It has a large collector current and low collector saturation voltage. The external dimensions are ROHM:SMT3, EIAJ:SC-59, JEDEC:SOT-346.
2SB1590K is a low voltage high power NPN transistor from Toshiba. It has a maximum collector current of -1A and a typical saturation voltage of only -0.3V. The transistor is available in a SOT-323 package with external dimensions of 2.8mm*1.6mm*0.4mm.
This document describes the features and characteristics of a medium power transistor called 2SB1561. The transistor has low saturation voltage, high voltage and power handling capabilities, and is complementary to 2SD2391.
This document mainly introduces the characteristics of 2SB1427 power transistor, including external dimensions, absolute maximum ratings, packaging specifications and electrical characteristics.
