2SD2672 is a low frequency power transistor produced by Mitsubishi Electric. Its characteristics are large collector current (4A) and low collector-emitter saturation voltage (250mV), which are suitable for low frequency amplifiers and driver circuits.
The 2SD2672 is a low‑frequency amplifier transistor designed for driver applications. It features a large collector current capability and low saturation voltage, making it suitable for audio‑visual, office‑automation, and communications equipment.
The document lists key electrical ratings such as collector‑base voltage, collector‑emitter voltage, and maximum collector current, as well as packaging dimensions, power dissipation limits, and thermal specifications. Application circuit examples and usage notes are included to aid designers in integrating the device safely.
| Collector current (Ic) | 4 A |
|---|---|
| Collector‑base voltage (Vcbo) | 15 V |
| Collector‑emitter voltage (Vceo) | 12 V |
| Emitter‑base voltage (Vebo) | 6 V |
| Power dissipation (Pc) | 72 W |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | 250 MHz |
The transistor can handle up to 4 A of collector current.
The transition frequency is specified as 250 MHz.
The device can dissipate up to 72 W under the specified conditions.